2SB1197_0712 [BL Galaxy Electrical]
Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
| 型号： | 2SB1197_0712 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：408K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SB1197
FEATURES
Pb
Lead-free
z
z
z
z
z
z
Small surface mounting type.
Corredtor peak current(Max.=1000mA)
Suitable for high packing density.
Low voltage(Max.=40v)
High saturation current capability.
Voltage controlled small signal switch.
APPLICATIONS
SOT-23
z
Telephone and professional communication equipment.
z
Other switching appilications.
ORDERING INFORMATION
Type No.
2SB1197
Marking
Package Code
SOT-23
AHP,AHQ,AHR
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
-32
-5
V
V
Collector Current DC
-800
-1
mA
A
Peak Collector Current
Peak Base Current
ICM
IBM
-80
200
mA
mW
℃
Collector Dissipation
PC
Junction and Storage Temperature
Tj,Tstg
-65~150
Document number: BL/SSSTC016
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SB1197
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
IC=-50μA,IE=0
-40
V
V
V
V(BR)CEO
V(BR)EBO
IC=-1mA,IB=0
-32
-5
IE=-50μA,IC=0
ICBO
IEBO
VCB=-20V,IE=0
VEB=-4V,IC=0
-0.5
-0.5
μA
μA
Emitter cut-off current
DC current gain
hFE
VCE=-3V,IC=-100mA
82
50
390
-0.5
Collector-emitter saturation voltage
IC=-500mA, IB=-50mA
VCE(sat)
V
VCE=-5V, IC=-50mA
f=100MHz
Transition frequency
fT
MHz
Collector output capacitance
VCB=-10V,IE=0,f=1MHz
Cob
30
pF
CLASSIFICATION OF hFE(1)
Range
82-180
120-270
Q
180-390
R
Marking
P
Document number: BL/SSSTC016
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SB1197
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC016
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SB1197
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
Dim
A
Min
2.85
1.25
Max
2.95
1.35
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
G
H
J
0.1Typical
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
2SB1197
3000/Tape&Reel
Document number: BL/SSSTC016
Rev.A
www.galaxycn.com
4
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